|
段纯刚职称: 直属机构: 必赢766net手机版 学科: |
|
|
|
10 访问 |
相关教师 |
个人资料
教育经历1994年 武汉大学物理系本科 1998年 中科院物理所理论物理博士 工作经历1998.10--2007.05 美国内布拉斯加大学博士后、研究助理教授 2007.06--2008.03 同济大学物理系教授 2008.03--2016.06 必赢766net手机版信息科学技术学院教授 2016.06--2019.06 必赢766net手机版信息科学技术学院常务副院长 2019.07--2021.12 必赢766net手机版常务副院长 2021.03--2022.06 上海推进科技创新中心建设办公室平台处副处长(挂职) 2021.07--2025.01 必赢766net手机版发展规划部部长兼重点建设办公室主任 个人简介段纯刚,必赢766net手机版紫江特聘教授,教育部创新团队带头人,国家杰出青年基金获得者,国家“万人计划”领军人才。1994年武汉大学物理系本科毕业,1998年中科院物理所理论物理博士毕业。1998年至2007年在美国从事研究工作,2008年加入必赢766net手机版,目前担任极化材料与器件教育部重点实验室主任,必赢766net手机版科学技术发展委员会秘书长,曾任必赢766net手机版信息科学与技术学院常务副院长,必赢766net手机版常务副院长,必赢766net手机版发展规划部部长兼重点建设办公室主任。 第十三届上海市政协委员(2018.1-2023.1),上海市第十六届人民代表大会代表、常委。 主要从事新型电子功能材料研究,尤其聚焦磁性、铁电、多铁和谷电子学材料,取得了一系列重要创新成果,主要包括:①提出铁谷体概念和发展了低维铁性研究;②理论设计并实验制备了铁性隧道结,由此开展了基于铁性的神经形态器件研究;③发现了多种新型磁电效应,拓展了磁电效应研究方向,并据此开展了相应实验研究,验证了理论预言。在Nat. Mat.、Nat. Elec.、Nat. Comm.、PRL、Adv. Mater.、Nano Lett.等国际著名学术刊物上共发表论文300余篇,被Rev. Mod. Phys.、Science、Nature及其子刊等国际学术刊物引用20000余次,其中逾40篇文章引用上百次(谷歌学术),另为四部中英文专著撰写章节。 社会兼职现为中国材料研究学会计算材料学分会委员,中国硅酸盐学会微纳技术分会委员,上海计算物理专业委员,曾任第4届国际材料大会多铁体分会(2012年)国际顾问委员会成员,第4届亚太多铁会委员,目前担任J. Phys.: Cond. Matt. 学科主编(Section Editor), npj Comp. Mater.副主编,J. Materiomics,Fron. Cond. Matt. Phys.等国际知名杂志编委。 中科院物理所磁学国家重点实验室第八届学术委员会委员 复旦大学计算物质科学教育部重点实验室学术委员会委员 吉林大学物质模拟方法与软件教育部重点实验室第一届学术委员会委员 南方科技大学广东省信息功能氧化物材料与器件重点实验室第一届学术委员会委员 西湖大学浙江省量子材料重点实验室第一届学术委员会委员 研究方向主要从事固体材料结构和物性的理论研究和计算模拟‚近期研究领域包括:
拟招收两至三名在上述领域有丰富经验的博士后‚有兴趣可以来email联系! 专业杂志链接:
招生与培养开授课程固体物理 (本科) 磁电子学 (研究生) 科研项目
学术成果近期代表性学术成果:
1. J.-D. Zheng, C.-S. Yao, S.-C. Zhou, Y.-K. Zhang, Z.-Q. Bao, W.-Y. Tong, J.-H. Chu, C.-G. Duan. Machine Learning Exploration of Topological Polarization Pattern in Hexagonal Boron Nitride Moiré Superlattice. Advanced Functional Materials 35, 2503011 (2025).
2. Y.-K. Zhang, J.-D. Zheng, Y.-H. Shen, Y.-F. Zhao, Y.-Q. Li, Z.-Q. Bao, W.-Y. Tong, J.-H. Chu, C.-G. Duan. Electric-field-induced quantum anomalous valley Hall effect in antiferromagnetic bilayer. Newton 1, 100205 (2025).
3. Y. Yu, L. Zhang, Y. Zheng, B. Liu, Z. Li, M. Cui, Y. Li, W. Tong, R. Qi, S. Mao, F. Yue, H. Peng, R. Huang, C. Duan. Artificial Optoelectronic Synapse Based on 18R-Phase SnSe2 for Neuromorphic Computing. Laser & Photonics Reviews 19, 2500214 (2025).
4. H. Ye, P. Wang, R. Wang, J. Wang, X. Xu, R. Feng, T. Wang, W.-Y. Tong, F. Liu, B. Sheng, W. Ma, B. An, H. Li, Z. Chen, C.-G. Duan, W. Ge, B. Shen, X. Wang. Experimental determination of giant polarization in wurtzite III-nitride semiconductors. Nature Communications 16, 3863 (2025).
5. Z. Yang, K. Qu, Y. Zhao, L. Wang, L. Kovarik, P. V. Sushko, Y. Lyu, J. Zhang, P. Yu, C. Duan, Y. Du. In situ atomic-resolution imaging of water vapor–driven multistep oxidation dynamics in strontium cobaltite. Science Advances 11, eadx8890 (2025).
6. Y.-T. Xu, X. Niu, Y.-F. Zhao, Y.-K. Zhang, Y. Cai, M.-Y. Fu, M. Feng, K. Qu, X. Deng, B.-W. Wang, Y.-Q. Wang, Z. Guan, Z.-Z. Yang, B.-B. Chen, N. Zhong, C.-G. Duan, P.-H. Xiang. Proton-controlled Dzyaloshinskii–Moriya interaction and topological Hall effect in hydrogenated strontium ruthenate. Materials Horizons 12, 1619 (2025).
7. J. Wu, Y. Xu, S. Hao, G. Feng, Q. Zhu, C. Duan, J. Chu, B. Tian. Improvement of endurance and compatibility of organic ferroelectric polymer through inserting Al2O3 interfacial layer. Physical Review B 111, 214111 (2025).
8. L.-Q. Wei, J.-H. Huang, Z.-J. Ma, Y.-F. Jiang, W.-Y. Tong, Z. Guan, Y.-Q. Wang, B.-B. Chen, P. Xiang, Y.-G. Shi, C.-G. Duan, N. Zhong. Reconfigurable bipolar transistors enabled by breathing-Kagome Nb3Cl8. Materials Horizons 12, 9653 (2025).
9. L. Wei, Y. Zheng, Z. Guan, W. Tong, W. Fan, H. Xu, W.-H. Sun, Y. Cheng, B.-B. Chen, P.-H. Xiang, C.-G. Duan, N. Zhong. Multi-Terraced Stacking Engineering in Moiré Ferroelectric Superlattice. Advanced Materials n/a, e14265 (2025).
10. K.-Q. Wang, J.-D. Zheng, W.-Y. Tong, C.-G. Duan. Breathing ferroelectricity induced topological valley states in kagome niobium halide monolayers. npj Computational Materials 11, 223 (2025).
11. J. Wang, Y.-Q. Li, R. Wang, Q. Liu, H. Ye, P. Wang, X. Xu, H. Yang, F. Liu, B. Sheng, L. Yang, X. Yin, Y. Tong, T. Wang, W.-Y. Tong, X.-Z. Li, C.-G. Duan, B. Shen, X. Wang. Unveiling interfacial dead layer in wurtzite ferroelectrics. Nature Communications 16, 6069 (2025).
12. J. Lin, H. Wang, Y. Zheng, Y. Kan, R. Chen, M. Long, Y. Chen, Z. Zhou, R. Qi, F. Yue, C.-G. Duan, J. Chu, L. Sun. Enhanced Bulk Photovoltaic Effect of Single-Domain Freestanding BiFeO3 Membranes. Advanced Materials 37, 2414113 (2025).
13. Y.-Q. Li, Y.-K. Zhang, X.-L. Lu, Y.-P. Shao, Z.-Q. Bao, J.-D. Zheng, W.-Y. Tong, C.-G. Duan. Ferrovalley Physics in Stacked Bilayer Altermagnetic Systems. Nano Letters 25, 6032 (2025).
14. Y. Li, K. Qu, R. Jiang, H. Wang, X. Zhao, Z. Yang, B. Tian, J. Tao, J. Chu, C. Duan. Atomic-Scale Defect Reconfiguration via Thermally Induced Structural Ordering for High-Efficiency Sb2Se3 Solar Cells. ACS Nano 19, 33460 (2025).
15. Y.-F. Jiang, H.-Y. Peng, Y. Cai, Y.-T. Xu, M.-Y. Fu, M. Feng, B.-W. Wang, Y.-Q. Wang, Z. Guan, B.-B. Chen, N. Zhong, C.-G. Duan, P.-H. Xiang. Adaptive ferroelectric memristors with high-throughput BaTiO3 thin films for neuromorphic computing. Materials Horizons 12, 6928 (2025).
16. Q.-W. He, J.-L. Jian, Y. Li, D. Li, S. Zhang, S. Kong, N. Zhong, C.-G. Duan, W.-Y. Tong. Design Rules for Improving Dielectric Constants of Hafnium-Based Oxides. Journal of Materiomics, 101148 (2025).
17. Z. Guan, L.-Q. Wei, W.-C. Fan, Y.-C. Sun, W. Cao, M. Tian, N. Wan, W.-Y. Tong, B.-B. Chen, P.-H. Xiang, C.-G. Duan, N. Zhong. Mechanical force-induced interlayer sliding in interfacial ferroelectrics. Nature Communications 16, 986 (2025).
18. Z. Guan, W.-C. Fan, L.-Q. Wei, W. Cao, W.-Y. Tong, M. Tian, N. Wan, W.-H. Sun, B.-B. Chen, P.-H. Xiang, C.-G. Duan, N. Zhong. Phase Transition of Moiré Edges in Interfacial Ferroelectrics. ACS Nano 19, 39220 (2025).
19. G. Feng, X. Zhao, X. Huang, X. Zhang, Y. Wang, W. Li, L. Chen, S. Hao, Q. Zhu, Y. Ivry, B. Dkhil, B. Tian, P. Zhou, J. Chu, C. Duan. In-memory ferroelectric differentiator. Nature Communications 16, 3027 (2025).
20. W.-C. Fan, Z. Guan, L.-Q. Wei, H.-W. Xu, W.-Y. Tong, M. Tian, N. Wan, C.-S. Yao, J.-D. Zheng, B.-B. Chen, P.-H. Xiang, N. Zhong, C.-G. Duan. Edge polarization topology integrated with sliding ferroelectricity in Moiré system. Nature Communications 16, 3557 (2025).
21. Y. Dai, S. Hao, G. Feng, W. Li, J. Liu, Q. Zhu, H. Peng, B. Tian, J. Chu, C. Duan. A Self-Powered Organic Vision Sensor Array for Photopic Adaptation. Nano Letters 25, 2878 (2025).
22. J. Zeng, G. Feng, G. Wu, J. Liu, Q. Zhao, H. Wang, S. Wu, X. Wang, Y. Chen, S. Han, B. Tian, C. Duan, T. Lin, J. Ge, H. Shen, X. Meng, J. Chu, J. Wang. Multisensory Ferroelectric Semiconductor Synapse for Neuromorphic Computing. Advanced Functional Materials 34, 2313010 (2024).
23. W. Xu, Y.-P. Shao, J.-L. Wang, J.-D. Zheng, W.-Y. Tong, C.-G. Duan. Origin of metallic ferroelectricity in group-V monolayer black phosphorus. Physical Review B 109, 035421 (2024).
24. Y. Wang, C. Huang, Z. Cheng, Z. Liu, Y. Zhang, Y. Zheng, S. Chen, J. Wang, P. Gao, Y. Shen, C. Duan, Y. Deng, C.-W. Nan, J. Li. Halide Perovskite Inducing Anomalous Nonvolatile Polarization in Poly(vinylidene fluoride)-based Flexible Nanocomposites. Nature Communications 15, 3943 (2024).
25. J.-L. Wang, Y.-F. Zhao, W. Xu, J.-D. Zheng, Y.-P. Shao, W.-Y. Tong, C.-G. Duan. Nanotube ferroelectric tunnel junctions with an ultrahigh tunneling electroresistance ratio. Materials Horizons 11, 1325 (2024).
26. J. Wang, X. Li, X. Ma, L. Chen, J.-M. Liu, C.-G. Duan, J. Íñiguez-González, D. Wu, Y. Yang. Ultrafast Switching of Sliding Polarization and Dynamical Magnetic Field in van der Waals Bilayers Induced by Light. Physical Review Letters 133, 126801 (2024).
27. H. Wang, J. Meng, J. Lin, B. Xu, H. Ma, Y. Kan, R. Chen, L. Huang, Y. Chen, F. Yue, C.-G. Duan, J. Chu, L. Sun. Origin of the light-induced spin currents in heavy metal/magnetic insulator bilayers. Nature Communications 15, 4362 (2024).
28. F. Sui, H. Li, R. Qi, M. Jin, Z. Lv, M. Wu, X. Liu, Y. Zheng, B. Liu, R. Ge, Y.-N. Wu, R. Huang, F. Yue, J. Chu, C. Duan. Atomic-level polarization reversal in sliding ferroelectric semiconductors. Nature Communications 15, 3799 (2024).
29. M. Lv, J. Wang, M. Tian, N. Wan, W. Tong, C. Duan, J. Xue. Multiresistance states in ferro- and antiferroelectric trilayer boron nitride. Nature Communications 15, 295 (2024).
30. Q. Li, L. Wei, N. Zhong, X. Shi, D. Han, S. Zheng, F. Du, J. Shi, J. Chen, H. Huang, C. Duan, X. Qian. Low-k nano-dielectrics facilitate electric-field induced phase transition in high-k ferroelectric polymers for sustainable electrocaloric refrigeration. Nature Communications 15, 702 (2024).
31. G. Feng, Q. Zhu, X. Liu, L. Chen, X. Zhao, J. Liu, S. Xiong, K. Shan, Z. Yang, Q. Bao, F. Yue, H. Peng, R. Huang, X. Tang, J. Jiang, W. Tang, X. Guo, J. Wang, A. Jiang, B. Dkhil, B. Tian, J. Chu, C. Duan. A ferroelectric fin diode for robust non-volatile memory. Nature Communications 15, 513 (2024).
32. Z. Guan, Y.-Z. Zheng, W.-Y. Tong, N. Zhong, Y. Cheng, P.-H. Xiang, R. Huang, B.-B. Chen, Z.-M. Wei, J.-h. Chu, C.-G. Duan. 2D Janus Polarization Functioned by Mechanical Force. Advanced Materials 36, 2403929 (2024).
33. X. Deng, Y.-X. Liu, Z.-Z. Yang, Y.-F. Zhao, Y.-T. Xu, M.-Y. Fu, Y. Shen, K. Qu, Z. Guan, W.-Y. Tong, Y.-Y. Zhang, B.-B. Chen, N. Zhong, P.-H. Xiang, C.-G. Duan. Spatial evolution of the proton-coupled Mott transition in correlated oxides for neuromorphic computing. Science Advances 10, eadk9928 (2024).
34. Y.-K. Zhang, J.-D. Zheng, W.-Y. Tong, Y.-F. Zhao, Y.-F. Tan, Y.-H. Shen, Z. Guan, F.-Y. Yue, P.-H. Xiang, N. Zhong. Ferroelastically controlled ferrovalley states in stacked bilayer systems with inversion symmetry. Physical Review B 108, L241120 (2023).
35. D.-Y. Zhang, Y. Sang, T. K. Das, Z. Guan, N. Zhong, C.-G. Duan, W. Wang, J. Fransson, R. Naaman, H.-B. Yang. Highly Conductive Topologically Chiral Molecular Knots as Efficient Spin Filters. Journal of the American Chemical Society 145, 26791 (2023).
36. W. Xu, J. D. Zheng, W. Y. Tong, J. L. Wang, Y. P. Shao, Y. K. Zhang, Y. F. Tan, C. G. Duan. Strain‐Induced Ferroelectric Phase Transition in Group‐V Monolayer Black Phosphorus. Advanced Quantum Technologies 6, 2200169 (2023).
37. G. Wu, X. Zhang, G. Feng, J. Wang, K. Zhou, J. Zeng, D. Dong, F. Zhu, C. Yang, X. Zhao, D. Gong, M. Zhang, B. Tian, C. Duan, Q. Liu, J. Wang, J. Chu, M. Liu. Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing. Nature Materials 22, 1499 (2023).
38. Y. Tan, J. Zheng, X. Niu, Y. Zhao, N. Zhong, B. Tian, C. Duan. Research progress on 2D ferroelectric and ferrovalley materials and their neuromorphic application. Science China Physics, Mechanics & Astronomy 66, 117505 (2023).
39. Y.-Q. Li, X. Zhang, X. Shang, Q.-W. He, D.-S. Tang, X.-C. Wang, C.-G. Duan. Magnetic and Ferroelectric Manipulation of Valley Physics in Janus Piezoelectric Materials. Nano Letters 23, 10013 (2023).
40. J.-D. Zheng, Y.-F. Zhao, Z.-Q. Bao, Y.-H. Shen, Z. Guan, N. Zhong, F.-Y. Yue, P.-H. Xiang, C.-G. Duan. Flexoelectric effect induced p–n homojunction in monolayer GeSe. 2D Materials 9, 035005 (2022).
41. P.-C. Wu, C.-C. Wei, Q. Zhong, S.-Z. Ho, Y.-D. Liou, Y.-C. Liu, C.-C. Chiu, W.-Y. Tzeng, K.-E. Chang, Y.-W. Chang, J. Zheng, C.-F. Chang, C.-M. Tu, T.-M. Chen, C.-W. Luo, R. Huang, C.-G. Duan, Y.-C. Chen, C.-Y. Kuo, J.-C. Yang. Twisted oxide lateral homostructures with conjunction tunability. Nature Communications 13, 2565 (2022).
42. J. Lao, M. Yan, B. Tian, C. Jiang, C. Luo, Z. Xie, Q. Zhu, Z. Bao, N. Zhong, X. Tang, L. Sun, G. Wu, J. Wang, H. Peng, J. Chu, C. Duan. Ultralow-Power Machine Vision with Self-Powered Sensor Reservoir. Advanced Science 9, 2106092 (2022).
43. Y.-H. Lai, J.-D. Zheng, S.-C. Lu, Y.-K. Wang, C.-G. Duan, P. Yu, Y.-Z. Zheng, R. Huang, L. Chang, M.-W. Chu, J.-H. Hsu, Y.-H. Chu. Antiferroelectric PbSnO3 epitaxial thin films. Advanced Science 9, 2203863 (2022).
44. Z. Guan, Y. Zhao, X. Wang, N. Zhong, X. Deng, Y. Zheng, J. Wang, D. Xu, R. Ma, F. Yue, Y. Cheng, R. Huang, P. Xiang, Z. Wei, J. Chu, C. Duan. Electric-field-induced room-temperature antiferroelectric–ferroelectric phase transition in van der Waals layered GeSe. ACS Nano 16, 1308 (2022).
45. Z. Guan, Y.-K. Li, Y.-F. Zhao, Y. Peng, G. Han, N. Zhong, P.-H. Xiang, J.-H. Chu, C.-G. Duan. Mechanical polarization switching in Hf0.5Zr0.5O2 thin film. Nano Letters 22, 4792 (2022).
46. C.-C. Chiu, S.-Z. Ho, J.-M. Lee, Y.-C. Shao, Y. Shen, Y.-C. Liu, Y.-W. Chang, Y.-Z. Zheng, R. Huang, C.-F. Chang, C.-Y. Kuo, C.-G. Duan, S.-W. Huang, J.-C. Yang, Y.-D. Chuang. Presence of Delocalized Ti 3d Electrons in Ultrathin Single-Crystal SrTiO3. Nano Letters 22, 1580 (2022).
47. Y.-F. Zhao, Y.-H. Shen, H. Hu, W.-Y. Tong, C.-G. Duan. Combined piezoelectricity and ferrovalley properties in Janus monolayer VClBr. Physical Review B 103, 115124 (2021).
48. L. Zhang, G. S. Shi, B. Q. Peng, P. F. Gao, L. Chen, N. Zhong, L. H. Mu, L. J. Zhang, P. Zhang, LuGou, Y. M. Zhao, S. S. Liang, J. Jiang, Z. J. Zhang, H. T. Ren, X. L. Lei, R. B. Yi, Y. W. Qiu, Y. F. Zhang, X. Liu, M. H. Wu, L. Yan, C.-G. Duan, S. L. Zhang, H. P. Fang. Novel 2D CaCl crystals with metallicity, room-temperature ferromagnetism, heterojunction, piezoelectricity-like property and monovalent calcium ions. National Science Review 8, nwaa274 (2021).
49. D.-D. Xu, R.-R. Ma, A.-P. Fu, Z. Guan, N. Zhong, H. Peng, P.-H. Xiang, C.-G. Duan. Ion adsorption-induced reversible polarization switching of a van der Waals layered ferroelectric. Nature Communications 12, 655 (2021).
50. M.-F. Tsai, Y.-Z. Zheng, S.-C. Lu, J.-D. Zheng, H. Pan, C.-G. Duan, P. Yu, R. Huang, Y.-H. Chu. Antiferroelectric Anisotropy of Epitaxial PbHfO3 Films for Flexible Energy Storage. Advanced Functional Materials 31, 2105060 (2021).
51. Y.-H. Shen, W.-Y. Tong, H. Hu, J.-D. Zheng, C.-G. Duan. Exotic Dielectric Behaviors Induced by Pseudo-Spin Texture in Magnetic Twisted Bilayer. Chinese Physics Letters 38, 037501 (2021).
52. Y. Shen, X. Wan, Q. Zhao, G. Li, C.-G. Duan. Non-d0 ferroelectricity from semicovalent superexchange in bismuth ferrite. Physical Review B 104, 024421 (2021).
53. Y.-D. Liou, S.-Z. Ho, W.-Y. Tzeng, Y.-C. Liu, P.-C. Wu, J. Zheng, R. Huang, C.-G. Duan, C.-Y. Kuo, C.-W. Luo, Y.-C. Chen, J.-C. Yang. Extremely Fast Optical and Nonvolatile Control of Mixed-Phase Multiferroic BiFeO3 via Instantaneous Strain Perturbation. Advanced Materials 33, 2007264 (2021).
54. X. Deng, S.-Q. Wang, Y.-X. Liu, N. Zhong, Y.-H. He, H. Peng, P.-H. Xiang, C.-G. Duan. A Flexible Mott Synaptic Transistor for Nociceptor Simulation and Neuromorphic Computing. Advanced Functional Materials 31, 2101099 (2021).
55. J. Yao, M. Ye, Y. Sun, Y. Yuan, H. Fan, Y. Zhang, C. Chen, C. Liu, K. Qu, G. Zhong, T. Jia, Z. Fan, S. Ke, Y. Zhao, C. Duan, P. Gao, J. Li. Atomic-Scale insight into the reversibility of polar order in ultrathin epitaxial Nb:SrTiO3/BaTiO3 heterostructure and its implication to resistive switching. Acta Materialia 188, 23 (2020).
56. G. Wu, B. Tian, L. Liu, W. Lv, S. Wu, X. Wang, Y. Chen, J. Li, Z. Wang, S. Wu, H. Shen, T. Lin, P. Zhou, Q. Liu, C. Duan, S. Zhang, X. Meng, S. Wu, W. Hu, X. Wang, J. Chu, J. Wang. Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains. Nature Electronics 3, 43 (2020).
57. L. Shi, G. Zheng, B. Tian, B. Dkhil, C. Duan. Research progress on solutions to the sneak path issue in memristor crossbar arrays. Nanoscale Adv 2, 1811 (2020).
58. D. Li, L. Zhu, X. Liu, W. Xiao, J. Yang, R. Ma, L. Ding, F. Liu, C. Duan, M. Fahlman, Q. Bao. Enhanced and Balanced Charge Transport Boosting Ternary Solar Cells Over 17% Efficiency. Advanced Materials 32, 2002344 (2020).
59. H. Hu, W.-Y. Tong, Y.-H. Shen, X. Wan, C.-G. Duan. Concepts of the half-valley-metal and quantum anomalous valley Hall effect. npj Computational Materials 6, 129 (2020).
60. H. Hu, W.-Y. Tong, Y.-H. Shen, C.-G. Duan. Electrical control of the valley degree of freedom in 2D ferroelectric/antiferromagnetic heterostructures. Journal of Materials Chemistry C 8, 8098 (2020).
论著(章节)
1. Xin-Wei Shen, He Hu, Chun-Gang Duan. Spintronic 2D Materials: Fundamentals and Applications, Chapter 3, Two-dimensional ferrovalley materials (Materials Today). Elsevier Science (2019). ISBN: 978-0-081-02155-2 2. Y.W. Fang, W.Y. Tong, C.G. Duan, Integrated Multiferroic heterostructures and applications, Edited by Ming Liu and Ziyao Zhou, Chapter 4, Multiferroic Simulations, Wiley-VCH (2019). ISBN: 978-3-527-34177-1. 3. W.Y. Tong, C.G. Duan, Exchange Bias, Edited by Surender Kumar Sharma, Chapter 7, All-Electric Spintronics through Surface/Interface Effects, CRC Press (2017). ISBN: 978-1-4987-9723-8. 4. 龚士静,段纯刚,《自旋电子学导论》韩秀峰主编,第24章 “基于磁电耦合效应的电控磁性研究”,科学出版社 (2014). ISBN: 978-7-0304-2826-4.
前期代表性工作:
B. B. Tian, J. L. Wang, S. Fusil, Y. Liu, X. L. Zhao, S. Sun, H. Shen, T. Lin, J. L. Sun, C. G. Duan, M. Bibes, A. Barthélémy, B. Dkhil, V. Garcia, X. J. Meng, J. H. Chu. Tunnel electroresistance through organic ferroelectrics. Nat. Commun. 7, 11502 (2016). 综述和前瞻文章:
近期国际学术报告:
荣誉及奖励 |